Impact ionisation electroluminescence in planar GaAs-based heterostructure Gunn diodes: Spatial distribution and impact of doping non-uniformities
نویسندگان
چکیده
منابع مشابه
Impact Ionisation Electroluminescence in Planar GaAs-based Heterostructure Gunn Diodes: Spatial Distribution and Impact of Doping Non-Unformities
When biased on the negative differential resistance regime, electroluminescence (EL) is emitted from planar GaAs heterostructure Gunn diodes due to the recombination of electrons in the device channel with holes that are generated by impact ionisation when the Gunn domains reach the anode edge. This EL forms non-uniform patterns whose intensity shows short-range intensity variations in the dire...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2013
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.4798270